Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Che Yu Lin, Xiaodan Zhu, Shin Hung Tsai, Shiao Po Tsai, Sidong Lei, Yumeng Shi, Lain Jong Li, Shyh Jer Huang, Wen Fa Wu, Wen Kuan Yeh, Yan Kuin Su, Kang L. Wang, Yann Wen Lan

研究成果: Article同行評審

25 引文 斯高帕斯(Scopus)

摘要

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

原文English
頁(從 - 到)11015-11023
頁數9
期刊ACS nano
11
發行號11
DOIs
出版狀態Published - 2017 十一月 28

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 工程 (全部)
  • 物理與天文學 (全部)

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