摘要
Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.
| 原文 | English |
|---|---|
| 主出版物標題 | 2018 IEEE International Electron Devices Meeting, IEDM 2018 |
| 發行者 | Institute of Electrical and Electronics Engineers Inc. |
| 頁面 | 22.6.1-22.6.4 |
| ISBN（電子） | 9781728119878 |
| DOIs | |
| 出版狀態 | Published - 2019 一月 16 |
| 事件 | 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States 持續時間: 2018 十二月 1 → 2018 十二月 5 |
出版系列
| 名字 | Technical Digest - International Electron Devices Meeting, IEDM |
|---|---|
| 卷 | 2018-December |
| ISSN（列印） | 0163-1918 |
Conference
| Conference | 64th Annual IEEE International Electron Devices Meeting, IEDM 2018 |
|---|---|
| 國家 | United States |
| 城市 | San Francisco |
| 期間 | 18-12-01 → 18-12-05 |
指紋
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
引用此文
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Atomristors : Memory Effect in Atomically-thin Sheets and Record RF Switches. / Ge, Ruijing; Wu, Xiaohan; Kim, Myungsoo; Chen, Po An; Shi, Jianping; Choi, Junho; Li, Xiaoqin; Zhang, Yanfeng; Chiang, Meng-Hsueh; Lee, Jack C.; Akinwande, Deji.
2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., 2019. p. 22.6.1-22.6.4 8614602 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).研究成果: Conference contribution
TY - GEN
T1 - Atomristors
T2 - Memory Effect in Atomically-thin Sheets and Record RF Switches
AU - Ge, Ruijing
AU - Wu, Xiaohan
AU - Kim, Myungsoo
AU - Chen, Po An
AU - Shi, Jianping
AU - Choi, Junho
AU - Li, Xiaoqin
AU - Zhang, Yanfeng
AU - Chiang, Meng-Hsueh
AU - Lee, Jack C.
AU - Akinwande, Deji
PY - 2019/1/16
Y1 - 2019/1/16
N2 - Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.
AB - Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.
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UR - http://www.scopus.com/inward/citedby.url?scp=85061781038&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2018.8614602
DO - 10.1109/IEDM.2018.8614602
M3 - Conference contribution
AN - SCOPUS:85061781038
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 22.6.1-22.6.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -