TY - GEN
T1 - Atomristors
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
AU - Ge, Ruijing
AU - Wu, Xiaohan
AU - Kim, Myungsoo
AU - Chen, Po An
AU - Shi, Jianping
AU - Choi, Junho
AU - Li, Xiaoqin
AU - Zhang, Yanfeng
AU - Chiang, Meng Hsueh
AU - Lee, Jack C.
AU - Akinwande, Deji
N1 - Funding Information:
The flexible atomristors were also investigated on polyimide substrate revealing that both HRS and LRS afford retention after 1000 bending cycles with reproducible switching curves (Fig. 12). These results reveal the promising potential of atomristors in high performance RF switches, flexible memory devices and other novel applications yet to be developed. V. CONCLUSION In summary, atomristors based on CVD and exfoliated atomically-thin MoS2 were investigated, featuring low switching voltage down to ~0.6 V, forming-free characteristic, and high on/off ratio up to 108. Record 15 ns pulse operation has been demonstrated among crystalline 2D NVRS memories. Ab-initio simulations reveal that the NVRS can be attributed to the interactions between metal ions and sulfur vacancies. In addition, small-area MoS2 RF switches offer record 70 THz figure of merit. This work indicates the new potential of 2D monolayers for NVRS memory and RF switches. ACKNOWLEDGMENT The authors acknowledge the group of Prof. Nanshu Lu of The University of Texas, Austin (UT-Austin) for bending cycle facility. We appreciate fruitful discussions with Ying-Chen Chen of UT-Austin, and Jesse Tice and Xing Lan of Northrop Grumman. This work is funded in part by a PECASE award, NSF ECCS-1809017 and MRSEC DMR-1720595 grants. REFERENCES [1] R. Ge et al., Nano Lett., vol. 18, pp. 434-441, 2018. [2] G. R. Bhimanapati et al., ACS Nano, vol. 9, no. 12, pp. 11509-11539, 2015. [3] C. Tan et al., Chem. Soc. Rev., vol. 44, pp. 2615-2628, 2015. [4] H. ?S. P. Wong et al., Proceedings of the IEEE, vol. 100, May 2012. [5] A. A. Bessonov et al., Nat. Mater, ??????????????????????????? [6] D. Son et al., Adv. Mater.??????????????????????????????? [7] F. M. Puglisi et al., 2016 IEDM., pp 34.8.1-34.8.4 [8] C. Hao et al., Adv. Funct. Mater., vol. 26, pp. ???????????????? [9] J. Shi et al., ACS Nano, vol. 8, pp. 10196-10204, 2014. [10] M. Kim et al., Nat. Commun., vol. 9, pp. 2524, 2018.
Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.
AB - Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.
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UR - http://www.scopus.com/inward/citedby.url?scp=85061781038&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2018.8614602
DO - 10.1109/IEDM.2018.8614602
M3 - Conference contribution
AN - SCOPUS:85061781038
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 22.6.1-22.6.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 1 December 2018 through 5 December 2018
ER -