Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches

Ruijing Ge, Xiaohan Wu, Myungsoo Kim, Po An Chen, Jianping Shi, Junho Choi, Xiaoqin Li, Yanfeng Zhang, Meng Hsueh Chiang, Jack C. Lee, Deji Akinwande

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)


Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS 2 ) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS 2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS 2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS 2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.

主出版物標題2018 IEEE International Electron Devices Meeting, IEDM 2018
發行者Institute of Electrical and Electronics Engineers Inc.
出版狀態Published - 2019 一月 16
事件64th Annual IEEE International Electron Devices Meeting, IEDM 2018 - San Francisco, United States
持續時間: 2018 十二月 12018 十二月 5


名字Technical Digest - International Electron Devices Meeting, IEDM


Conference64th Annual IEEE International Electron Devices Meeting, IEDM 2018
國家/地區United States
城市San Francisco

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學


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