Au/AuBe and Au/AuBe/Cr contacts have been deposited onto the surface of p-ZnTe. It was found that with a proper choice of Cr thickness, a low specific contact resistance of 2.0 × 106Ωcm2 can be achieved for Au/AuBe/Cr on p-ZnTe. It was also found that Zn outdiffusion will significantly degrade the electrical properties of the Au/AuBe contact on p-ZnTe when annealing temperature is above 300°C. Conversely, Au/AuBe/Cr contact is more thermally reliable. Such a property makes Au/AuBe/Cr attractive in device application.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering