AUGER ELECTRON SPECTROSCOPY OF A STABLE GERMANIUM OXIDE.

研究成果: Paper同行評審

6 引文 斯高帕斯(Scopus)

摘要

A stable germanium oxide is formed by depositing a SiO//2 film, by chemical vapor deposition, on a germanium substrate and annealing in oxygen. Auger electron spectra for this stable germanium oxide are presented. The chemical shifts and the new transitions due to oxidation are shown for some major peaks. The energy shifts and new transitions in Auger peaks of a thermally oxidized sample are used to establish the presence of germanium oxide in between the SiO//2 and Ge due to the oxidation annealings. The profiles of forming gas-annealed and argon-annealed samples are shown to contain very little oxidized Ge. The reduction of interface state density of Ge metal - insulator - semiconductor structures when annealed in O is probably due to the oxidation of Ge (and reduction of dissolved hydrogen) which reduces the defects originally present in the interface region following SiO//2 deposition.

原文English
頁面927-932
頁數6
DOIs
出版狀態Published - 1975
事件for 2nd Conf on Struct/Prop Relat in Thick Films and Bulk Coat - San Francisco, CA, USA
持續時間: 1975 二月 101975 二月 12

Conference

Conferencefor 2nd Conf on Struct/Prop Relat in Thick Films and Bulk Coat
城市San Francisco, CA, USA
期間75-02-1075-02-12

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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