@article{3f78d75973e5471dafac628a837f586d,
title = "Automated extraction of barrier heights for asymmetric MIM tunneling diodes",
abstract = "Cowell's method of extracting barrier heights of top and bottom electrode metals in asymmetric metal-insulator-metal (MIM) tunneling diodes exhibiting Fowler-Nordheim tunneling is successfully automated. Pt-Al2O3-TiN MIM diodes with 5 nm insulator thickness are used in demonstration. Conditions assuring successful application of Cowell's method and its automation are discussed.",
author = "Wallace Lin and Lu, {Darsen D.} and Hong, {Yi Xiu} and Hsu, {Wei Chou}",
note = "Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan (R.O.C.), grant MOST-105-2218-E-006-011 . We are grateful to the Center for Micro and Nano Science and Technology at National Cheng Kung University (NCKU) for nanofabrication facilities and services, and to Prof. Jone F. Chen and Prof. Shoou-Jinn Chang at NCKU for sharing characterization facilities. Funding Information: This work was supported by the Ministry of Science and Technology, Taiwan (R.O.C.), grant MOST-105-2218-E-006-011. We are grateful to the Center for Micro and Nano Science and Technology at National Cheng Kung University (NCKU) for nanofabrication facilities and services, and to Prof. Jone F. Chen and Prof. Shoou-Jinn Chang at NCKU for sharing characterization facilities.",
year = "2020",
month = oct,
doi = "10.1016/j.sse.2020.107879",
language = "English",
volume = "172",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
}