AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes

Ying Hung Chou, Jheng Tai Yan, Hsin Ying Lee, Ching Ting Lee

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

The co-sputtering Al-doped ZnO (AZO) films with Al nano-particles were used to increase the extraction efficiency of GaN-based light-emitting diodes (LEDs). Fixing the ZnO radio frequency (RF) power of 100W and changing the Al DC power from 0 to 13W, the AZO films with various Al contents can be obtained. In the experimental results, the AZO films deposited with Al DC power of 0, 4.5 and 7W do not have Al segregation. However, the segregated Al nano-particles can be found in the AZO films deposited by Al DC power of 10W and 13W. The co-sputtering 170 nm-thick AZO films with and without Al nano-particles were deposited on the transparent area of LEDs and compared the light output intensity of conventional LEDs. The light intensity of LEDs with AZO films with Al DC power 0, 4.5 and 7W increased 10% than that of conventional LEDs. This was due to the AZO film played a role of anti-reflection coating (ARC) layer. The light intensity of LEDs with AZO film deposited using Al DC power of 10W and 13W increased about 35% and 30%, respectively. It can be deduced that the output light is scattered by the Al nano-particles existed in the AZO film.

原文English
主出版物標題Gallium Nitride Materials and Devices III
DOIs
出版狀態Published - 2008 四月 21
事件Society of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
持續時間: 2008 一月 212008 一月 24

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
6894
ISSN(列印)0277-786X

Other

OtherSociety of Photo-Optical Instrumentation Engineers (SPIE)
國家/地區United States
城市San Jose, CA
期間08-01-2108-01-24

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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