Back-Bias Modulated UTBB SOI for System-on-Chip I/O Cells

Ming Yu Chang, Po Yu Chao, Meng Hsueh Chiang

研究成果: Conference contribution

摘要

Laterally diffused MOSFET (LDMOS) using ultra-thin body and buried oxide (BOX) silicon-on-insulator (UTBB SOI) is demonstrated. The proposed back bias technique offers design flexibility and process simplicity. The same back-gate biases that are applied to core devices for multiple threshold voltage can be applied to LDMOS for optimal I/O cells without additional processes.

原文English
主出版物標題Proceedings of the 22nd International Symposium on Quality Electronic Design, ISQED 2021
發行者IEEE Computer Society
頁面311-316
頁數6
ISBN(電子)9781728176413
DOIs
出版狀態Published - 2021 四月 7
事件22nd International Symposium on Quality Electronic Design, ISQED 2021 - Santa Clara, United States
持續時間: 2021 四月 72021 四月 9

出版系列

名字Proceedings - International Symposium on Quality Electronic Design, ISQED
2021-April
ISSN(列印)1948-3287
ISSN(電子)1948-3295

Conference

Conference22nd International Symposium on Quality Electronic Design, ISQED 2021
國家/地區United States
城市Santa Clara
期間21-04-0721-04-09

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程
  • 安全、風險、可靠性和品質

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