Bad page relaxation to prolong the lifetime of flash devices

Ming Chang Yang, Yuan Hung Kuan, Yuan Hao Chang, Pei Lun Suei, ChiaHeng Tu, Norman Chang

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

The lifetime degradation of new multi-level cell (MLC) flash devices is becoming more and more serious due to the fast-increasing bit error rate variance among flash pages, where a flash chip consists of multiple blocks and each block consists of a fixed number of pages. Existing works usually discard bad pages in the unit of a block, but result in shortened the device lifetime due to the insufficient storage capacity. This issue is exacerbated when new MLC flash devices are adopted. In contrast to existing works, we propose a bad page relaxation scheme to ultimately extend the device lifetime by discarding bad pages in the unit of a page. The proposed scheme takes advantage of the high flexibility of page-level mapping strategies in reading/writing pages to avoid management overheads. The experiments were conducted based on representative realistic workloads to evaluate the efficacy of the proposed scheme, and the results are very encouraging.

原文English
主出版物標題2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面715-716
頁數2
ISBN(電子)9781479951451
DOIs
出版狀態Published - 2014 二月 3
事件2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014 - Tokyo, Japan
持續時間: 2014 十月 72014 十月 10

出版系列

名字2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014

Other

Other2014 IEEE 3rd Global Conference on Consumer Electronics, GCCE 2014
國家/地區Japan
城市Tokyo
期間14-10-0714-10-10

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程

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