Band engineering magneto-resistance effect in Co:a-C films

P. Y. Chuang; J. C.A. Huang; P. E. Lu; H. S. Hsu; S. J. Sun; Y. W. Yang; J. M. Chen; C. H. Lee

doi:10.1016/j.carbon.2014.10.032

Band engineering magneto-resistance effect in Co:a-C films

P. Y. Chuang, J. C.A. Huang, P. E. Lu, H. S. Hsu, S. J. Sun, Y. W. Yang, J. M. Chen, C. H. Lee

物理學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.

原文	English
頁（從 - 到）	821-825
頁數	5
期刊	Carbon
卷	81
發行號	1
DOIs	https://doi.org/10.1016/j.carbon.2014.10.032
出版狀態	Published - 2015

All Science Journal Classification (ASJC) codes

一般化學
一般材料科學

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10.1016/j.carbon.2014.10.032

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引用此

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title = "Band engineering magneto-resistance effect in Co:a-C films",

abstract = "Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.",

author = "Chuang, {P. Y.} and Huang, {J. C.A.} and Lu, {P. E.} and Hsu, {H. S.} and Sun, {S. J.} and Yang, {Y. W.} and Chen, {J. M.} and Lee, {C. H.}",

year = "2015",

doi = "10.1016/j.carbon.2014.10.032",

language = "English",

volume = "81",

pages = "821--825",

journal = "Carbon",

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publisher = "Elsevier Limited",

number = "1",

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TY - JOUR

T1 - Band engineering magneto-resistance effect in Co:a-C films

AU - Chuang, P. Y.

AU - Huang, J. C.A.

AU - Lu, P. E.

AU - Hsu, H. S.

AU - Sun, S. J.

AU - Yang, Y. W.

AU - Chen, J. M.

AU - Lee, C. H.

PY - 2015

Y1 - 2015

N2 - Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.

AB - Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.

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SP - 821

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JO - Carbon

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Band engineering magneto-resistance effect in Co:a-C films

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