Band engineering magneto-resistance effect in Co:a-C films

P. Y. Chuang, J. C.A. Huang, P. E. Lu, H. S. Hsu, S. J. Sun, Y. W. Yang, J. M. Chen, C. H. Lee

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Co-doped amorphous carbon (Co:a-C) films, which comprise a homogeneously mixed carbon matrix phase with approximately 5 at.% cobalt, were deposited on quartz glass by radio frequency magnetron sputtering. A bias-dependent positive magnetoresistance (PMR) with a peak at a particular voltage was observed. The electronic structures were examined by ultraviolet photoelectron spectroscopy and X-ray absorption near edge spectroscopy. The spectroscopic results reveal that Co doping promotes the graphitization in the a-C matrix and the 3d orbital of Co is hybridized with sp2 states (DOSs) in the Co:a-C. The PMR effect is related to the modulation of the DOS of the Co:a-C films at the Fermi level by Zeeman splitting.

原文English
頁(從 - 到)821-825
頁數5
期刊Carbon
81
發行號1
DOIs
出版狀態Published - 2015

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)

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