Band topology of bismuth quantum films

Tay Rong Chang, Qiangsheng Lu, Xiaoxiong Wang, Hsin Lin, T. Miller, Tai Chang Chiang, Guang Bian

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi, conflicting with the theoretical results. To address this issue, we studied the band structure of Bi and Sb films by ARPES and first-principles calculations. The quantum confinement effectively enlarges the energy gap in the band structure of Bi films and enables a direct visualization of the ℤ2 topological invariant of Bi. We find that Bi quantum films in topologically trivial and nontrivial phases respond differently to surface perturbations. This way, we establish experimental criteria for detecting the band topology of Bi by spectroscopic methods.

原文English
文章編號510
期刊Crystals
9
發行號10
DOIs
出版狀態Published - 2019 十月

    指紋

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Inorganic Chemistry

引用此

Chang, T. R., Lu, Q., Wang, X., Lin, H., Miller, T., Chiang, T. C., & Bian, G. (2019). Band topology of bismuth quantum films. Crystals, 9(10), [510]. https://doi.org/10.3390/cryst9100510