Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

Ting Hao Chang; Shoou Jinn Chang; C. J. Chiu; Chih Yu Wei; Yen Ming Juan; Wen Yin Weng

doi:10.1109/LPT.2015.2400446

Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

Ting Hao Chang, Shoou Jinn Chang, C. J. Chiu, Chih Yu Wei, Yen Ming Juan, Wen Yin Weng

研究成果: Article › 同行評審

41 引文斯高帕斯（Scopus）

摘要

The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In₂O₃ content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ∼10⁵ and 0.18 A/W.

原文	English
文章編號	7041161
頁（從 - 到）	915-918
頁數	4
期刊	IEEE Photonics Technology Letters
卷	27
發行號	8
DOIs	https://doi.org/10.1109/LPT.2015.2400446
出版狀態	Published - 2015 4月 15

All Science Journal Classification (ASJC) codes

電子、光磁材料
原子與分子物理與光學
電氣與電子工程

存取文件

10.1109/LPT.2015.2400446

其它文件與鏈接

引用此

@article{36f294651ea74287af25683db0bb76b5,

title = "Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors",

abstract = "The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ∼105 and 0.18 A/W.",

author = "Chang, {Ting Hao} and Chang, {Shoou Jinn} and Chiu, {C. J.} and Wei, {Chih Yu} and Juan, {Yen Ming} and Weng, {Wen Yin}",

note = "Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

year = "2015",

month = apr,

day = "15",

doi = "10.1109/LPT.2015.2400446",

language = "English",

volume = "27",

pages = "915--918",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

AU - Chang, Ting Hao

AU - Chang, Shoou Jinn

AU - Chiu, C. J.

AU - Wei, Chih Yu

AU - Juan, Yen Ming

AU - Weng, Wen Yin

PY - 2015/4/15

Y1 - 2015/4/15

N2 - The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ∼105 and 0.18 A/W.

AB - The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ∼105 and 0.18 A/W.

UR - http://www.scopus.com/inward/record.url?scp=84927132888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84927132888&partnerID=8YFLogxK

U2 - 10.1109/LPT.2015.2400446

DO - 10.1109/LPT.2015.2400446

M3 - Article

AN - SCOPUS:84927132888

SN - 1041-1135

VL - 27

SP - 915

EP - 918

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

M1 - 7041161

ER -

Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此