Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

Ting Hao Chang, Shoou Jinn Chang, C. J. Chiu, Chih Yu Wei, Yen Ming Juan, Wen Yin Weng

研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were ∼105 and 0.18 A/W.

原文English
文章編號7041161
頁(從 - 到)915-918
頁數4
期刊IEEE Photonics Technology Letters
27
發行號8
DOIs
出版狀態Published - 2015 四月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 電氣與電子工程

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