Bandgap engineered ultraviolet photodetectors with gallium-zinc-oxide via co-sputtering method

C. P. Yang, S. P. Chang, S. J. Chang, S. X. Chen, M. H. Hsu, W. J. Tung, W. L. Huang, T. H. Chang, C. J. Chiu, W. Y. Weng

研究成果: Article

2 引文 (Scopus)

摘要

The authors report the fabrication of gallium-zinc-oxide (GZO)MSM ultraviolet photodetectors (PDs) via co-sputtering using Ga 2 O 3 and ZnO targets. The cutoff wavelength of the fabricated PDs is changed by adjusting the radio frequency power of the ZnO target during the co-sputtering procedure. The GZO thin films are investigated via physical analysis, such as atomic force microscopy, absorption coefficient spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the smooth GZO thin films are composed of a wide-gap semiconductor and a clearly n-type material. With a 10-V applied bias, the corresponding I Photo /I Dark ratios for three devices labeled A, B, and C are 1.4 × 10 3 , 9.3 × 10 2 , and 2.7 × 10 3 , respectively. Under corresponding cutoff wavelengths with a 0.2-V applied bias, the responsivity values are 2.7 × 10 -6 , 9 × 10 -6 , and 1.5 × 10 -4 for devices A, B, and C, respectively. Thus, these GZO ultraviolet PDs not only have a simple and low-cost fabrication process but also are suitable for ultraviolet sensing application owing to their outstanding electro-optical properties.

原文English
頁(從 - 到)Q3083-Q3088
期刊ECS Journal of Solid State Science and Technology
7
發行號7
DOIs
出版狀態Published - 2018 一月 1

指紋

Zinc Oxide
Gallium
Photodetectors
Zinc oxide
Sputtering
Energy gap
Oxide films
Fabrication
Thin films
Wavelength
Atomic force microscopy
X ray photoelectron spectroscopy
Optical properties
Spectroscopy
Semiconductor materials
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

引用此文

Yang, C. P. ; Chang, S. P. ; Chang, S. J. ; Chen, S. X. ; Hsu, M. H. ; Tung, W. J. ; Huang, W. L. ; Chang, T. H. ; Chiu, C. J. ; Weng, W. Y. / Bandgap engineered ultraviolet photodetectors with gallium-zinc-oxide via co-sputtering method. 於: ECS Journal of Solid State Science and Technology. 2018 ; 卷 7, 編號 7. 頁 Q3083-Q3088.
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abstract = "The authors report the fabrication of gallium-zinc-oxide (GZO)MSM ultraviolet photodetectors (PDs) via co-sputtering using Ga 2 O 3 and ZnO targets. The cutoff wavelength of the fabricated PDs is changed by adjusting the radio frequency power of the ZnO target during the co-sputtering procedure. The GZO thin films are investigated via physical analysis, such as atomic force microscopy, absorption coefficient spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the smooth GZO thin films are composed of a wide-gap semiconductor and a clearly n-type material. With a 10-V applied bias, the corresponding I Photo /I Dark ratios for three devices labeled A, B, and C are 1.4 × 10 3 , 9.3 × 10 2 , and 2.7 × 10 3 , respectively. Under corresponding cutoff wavelengths with a 0.2-V applied bias, the responsivity values are 2.7 × 10 -6 , 9 × 10 -6 , and 1.5 × 10 -4 for devices A, B, and C, respectively. Thus, these GZO ultraviolet PDs not only have a simple and low-cost fabrication process but also are suitable for ultraviolet sensing application owing to their outstanding electro-optical properties.",
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Bandgap engineered ultraviolet photodetectors with gallium-zinc-oxide via co-sputtering method. / Yang, C. P.; Chang, S. P.; Chang, S. J.; Chen, S. X.; Hsu, M. H.; Tung, W. J.; Huang, W. L.; Chang, T. H.; Chiu, C. J.; Weng, W. Y.

於: ECS Journal of Solid State Science and Technology, 卷 7, 編號 7, 01.01.2018, p. Q3083-Q3088.

研究成果: Article

TY - JOUR

T1 - Bandgap engineered ultraviolet photodetectors with gallium-zinc-oxide via co-sputtering method

AU - Yang, C. P.

AU - Chang, S. P.

AU - Chang, S. J.

AU - Chen, S. X.

AU - Hsu, M. H.

AU - Tung, W. J.

AU - Huang, W. L.

AU - Chang, T. H.

AU - Chiu, C. J.

AU - Weng, W. Y.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The authors report the fabrication of gallium-zinc-oxide (GZO)MSM ultraviolet photodetectors (PDs) via co-sputtering using Ga 2 O 3 and ZnO targets. The cutoff wavelength of the fabricated PDs is changed by adjusting the radio frequency power of the ZnO target during the co-sputtering procedure. The GZO thin films are investigated via physical analysis, such as atomic force microscopy, absorption coefficient spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the smooth GZO thin films are composed of a wide-gap semiconductor and a clearly n-type material. With a 10-V applied bias, the corresponding I Photo /I Dark ratios for three devices labeled A, B, and C are 1.4 × 10 3 , 9.3 × 10 2 , and 2.7 × 10 3 , respectively. Under corresponding cutoff wavelengths with a 0.2-V applied bias, the responsivity values are 2.7 × 10 -6 , 9 × 10 -6 , and 1.5 × 10 -4 for devices A, B, and C, respectively. Thus, these GZO ultraviolet PDs not only have a simple and low-cost fabrication process but also are suitable for ultraviolet sensing application owing to their outstanding electro-optical properties.

AB - The authors report the fabrication of gallium-zinc-oxide (GZO)MSM ultraviolet photodetectors (PDs) via co-sputtering using Ga 2 O 3 and ZnO targets. The cutoff wavelength of the fabricated PDs is changed by adjusting the radio frequency power of the ZnO target during the co-sputtering procedure. The GZO thin films are investigated via physical analysis, such as atomic force microscopy, absorption coefficient spectroscopy, and X-ray photoelectron spectroscopy. The results indicate that the smooth GZO thin films are composed of a wide-gap semiconductor and a clearly n-type material. With a 10-V applied bias, the corresponding I Photo /I Dark ratios for three devices labeled A, B, and C are 1.4 × 10 3 , 9.3 × 10 2 , and 2.7 × 10 3 , respectively. Under corresponding cutoff wavelengths with a 0.2-V applied bias, the responsivity values are 2.7 × 10 -6 , 9 × 10 -6 , and 1.5 × 10 -4 for devices A, B, and C, respectively. Thus, these GZO ultraviolet PDs not only have a simple and low-cost fabrication process but also are suitable for ultraviolet sensing application owing to their outstanding electro-optical properties.

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SN - 2162-8769

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