Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application

Yu An Li, Ke Jing Lee, Li Wen Wang, Yeong Her Wang

研究成果: Article同行評審

摘要

Barium titanate nickelate (BTN) nanorod (NR)-based resistive random access memory (RRAM) has been demonstrated by using the hydrothermal method. The prepared BTN NR materials have the advantages of ease of fabrication, low temperature application, ability to grow various materials, and relative cost effectiveness. In addition, the BTN NR-based RRAM displayed a highly repeatable and forming-free bipolar resistive switching behavior with an ON/OFF ratio of over 105. The resistive switching behavior may be related to the oxygen vacancies on the surface of the BTN NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned BTN NR. Compared to its counterpart of BTN thin film, superior reproducibility was also observed, demonstrating that the nanostructured material provides an effective way to improve the memory properties.

原文English
頁(從 - 到)2083-2089
頁數7
期刊Journal of Electronic Materials
50
發行號4
DOIs
出版狀態Published - 2021 四月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application」主題。共同形成了獨特的指紋。

引用此