TY - JOUR
T1 - Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy
AU - Yarn, K. F.
AU - Wang, Y. H.
AU - Chen, M. S.
PY - 1995/12
Y1 - 1995/12
N2 - We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.
AB - We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.
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U2 - 10.1016/0921-5107(95)01402-0
DO - 10.1016/0921-5107(95)01402-0
M3 - Article
AN - SCOPUS:0029488696
SN - 0921-5107
VL - 35
SP - 29
EP - 33
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1-3
ER -