Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

K. F. Yarn, Y. H. Wang, M. S. Chen

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.

原文English
頁(從 - 到)29-33
頁數5
期刊Materials Science and Engineering B
35
發行號1-3
DOIs
出版狀態Published - 1995 12月

All Science Journal Classification (ASJC) codes

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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