Behavior of silicon carbide materials under dry to hydrothermal conditions

Nicolas Biscay, Lucile Henry, Tadafumi Adschiri, Masahiro Yoshimura, Cyril Aymonier

研究成果: Review article同行評審

6 引文 斯高帕斯(Scopus)

摘要

Silicon carbide materials are excellent candidates for high‐performance applications due to their outstanding thermomechanical properties and their strong corrosion resistance. SiC materials can be processed in various forms, from nanomaterials to continuous fibers. Common applications of SiC materials include the aerospace and nuclear fields, where the material is used in severely oxidative environments. Therefore, it is important to understand the kinetics of SiC oxidation and the parameters influencing them. The first part of this review focuses on the oxidation of SiC in dry air according to the Deal and Grove model showing that the oxidation behavior of SiC depends on the temperature and the time of oxidation. The oxidation rate can also be accelerated with the presence of H2O in the system due to its diffusion through the oxide scales. Therefore, wet oxidation is studied in the second part. The third part details the effect of hydrothermal media on the SiC materials that has been explained by different models, namely Yoshimura (1986), Hirayama (1989) and Allongue (1992). The last part of this review focuses on the hydrothermal corrosion of SiC materials from an application point of view and determine whether it is beneficial (manufacturing of materi-als) or detrimental (use of SiC in latest nuclear reactors).

原文English
文章編號1351
期刊Nanomaterials
11
發行號5
DOIs
出版狀態Published - 2021 5月

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)

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