Beta-gallium oxide nanowire extended gate field effect transistor pH sensors prepared using furnace-oxidized gallium nitride thin films

研究成果: Article

3 引文 斯高帕斯(Scopus)

摘要

The structural characteristics of Ga2O3 nanowires and the sensitivity of Ga2O3 extended gate field effect transistor (EGFET) pH sensors are investigated. The Ga2O3 nanowires are prepared using a vapor-liquid-solid (VLS) mechanism. The results show that the nanowires correspond to β-Ga2O3 phase and single crystals. The β-Ga2O3 nanowires were active materials in the EGFET pH sensor. The resulting EGFET pH sensor containing β-Ga2O3 nanowires exhibits high detection of properties (14 μA · pH-1). The β-Ga2O3 nanowires are a candidate material for pH sensor.

原文English
頁(從 - 到)914-917
頁數4
期刊Nanoscience and Nanotechnology Letters
6
發行號10
DOIs
出版狀態Published - 2014 十月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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