Bias Temperature Instabilities for High-κ HfO₂ LTPS-TFTs with Dual Plasma Treatment

Engineering & Materials Science

• Thin film transistors 100%
• Plasmas 72%
• Negative bias temperature instability 37%
• Temperature 31%
• Oxides 22%
• Interface states 20%
• Gate dielectrics 18%
• Polysilicon 15%
• Stress analysis 13%
• Degradation 9%

Physics & Astronomy

• transistors 62%
• thin films 40%
• temperature 23%
• oxides 16%
• stress analysis 15%
• immunity 15%
• acceleration (physics) 14%
• polarity 12%
• degradation 9%
• silicon 7%
• performance 5%

Chemical Compounds

• Plasma 48%
• Interface State 20%
• Oxide 14%
• Polycrystalline Solid 11%
• Dielectric Material 11%
• Polarity 10%
• Compound Mobility 9%
• Time 4%