Bias voltage-controlled ferromagnetism switching in undoped zinc oxide thin film memory device

S. S. Li, Ricky W. Chuang, Y. K. Su, Y. M. Hu

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The bipolar resistive switching properties of Pt/ZnO/Pt multilayer film structure were investigated in this study. The M-H curves corresponding to the Pt/ZnO/Pt bipolar resistive switching device maintained at initial, high resistance, and low resistance states were individually obtained; all of which were ferromagnetic in nature. The strength of saturation magnetization of the device separately set at low resistance state, and the initial state was found to be strongest and weakest, respectively. Photoluminescence and X-ray photoelectron results indicate the presence of oxygen vacancies in the ZnO thin film. This resistive switching behavior accompanied with ferromagnetism could be attributed to the intrinsic defects. The results clearly demonstrate that the ferromagnetic switching capability of Pt/ZnO/Pt device is critically dependent on the bias voltage administered, which potentially allows this device to have magneto-electrical device applications.

原文English
文章編號252103
期刊Applied Physics Letters
109
發行號25
DOIs
出版狀態Published - 2016 十二月 19

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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