Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

H. I. Yim, S. Y. Lee, J. Y. Hwang, J. R. Rhee, B. S. Chun, K. L. Wang, Y. K. Kim, T. W. Kim, S. S. Lee, D. G. Hwang

研究成果: Article同行評審

摘要

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFe-SiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x/free layer 10/AlO x/CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of+0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage.

原文English
頁(從 - 到)1847-1850
頁數4
期刊Physica Status Solidi (A) Applications and Materials Science
205
發行號8
DOIs
出版狀態Published - 2008 8月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 電氣與電子工程
  • 材料化學

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