Bidirectional bistability in a GaAs/AlGaAs double heterojunction triangular barrier switch (DHTBS)

K. F. Yarn, Y. H. Wang

研究成果: Article同行評審

摘要

A novel GaAs n+-n-δ(p+)-n-p+-n-δ(p+)-n-n+ double heterojunction triangular barrier structure with two Al0.3G0.7As-doped barrier layers, exhibiting symmetrically bidirectional S-shaped negative differential resistance, has been successfully developed by molecular beam epitaxy. The occurrence of the bidirectional bistability switching behavior is caused by the potential redistribution due to the avalanche multiplication process within the reversely biased base-collector region. The possible mechanisms responsible for carrier transport are analyzed by an equivalent circuit including two triangular barrier diodes and annpn transistor. From experimental results, it is known that the environmental temperature plays an important role on the device performance. The influence of temperature on the switching parameters from 300 K to 150 K is also discussed.

原文English
頁(從 - 到)104-109
頁數6
期刊Thin Solid Films
257
發行號1
DOIs
出版狀態Published - 1995 二月 15

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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