Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Yeong Her Wang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO2/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO2/Ti diode. Experimental results show that the bipolar 1D1R memory device has reproducible, uniform, and self-rectifying resistive-switching behavior in low-resistance state. High current ON/OFF ratio (>105) and satisfactory retention (>>105 s) are achieved. Therefore, the proposed device exhibits high potential for high-density integrated nonvolatile memory applications.

原文English
頁(從 - 到)35-41
頁數7
期刊Vacuum
140
DOIs
出版狀態Published - 2017 六月 1

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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