Bipolar resistive switching behavior in Sol-Gel MgTiNiOx memory device

Yu Chi Chang, Ke Jing Lee, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

High-resistance state (HRS) current has significant effect on the reliability and power consumption of resistive switching memories. Low HRS current is helpful for obtaining ultra-low power and for high ON/OFF ratio nonvolatile memory application. The reduced HRS current of a sol-gel magnesium titanate nickelate-based resistive random access memory by using nickel (II) acetylacetone as substitute for acetylacetone in magnesium titanate (MTO) was presented. Forming-free, high ON/OFF ratio of over 106, excellent current distribution and good retention at 85 °C were achieved. Moreover, the effect of nickel (Ni) on the surface roughness, operation voltage, switching cycles, HRS current, ON/OFF ratio, current distribution, and switching behavior was explored. These results indicate that the incorporation of Ni in sol-gel MTO is an effective way to achieve high-performance memory devices.

原文English
文章編號7463006
頁(從 - 到)321-327
頁數7
期刊IEEE Journal of the Electron Devices Society
4
發行號5
DOIs
出版狀態Published - 2016 九月

    指紋

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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