Bipolar resistive switching characteristics in flexible Pt/MZT/Al Memory and Ni/NbO2/Ni selector structure

Ke Jing Lee, Yu Chi Chang, Cheng Jung Lee, Li Wen Wang, Yeong Her Wang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The use of a threshold-switching Ni/NbO2/Ni device with a memory-switching Pt/magnesium zirconate titanate/Al device on a flexible substrate was proposed to suppress undesired sneak currents. The proposed flexible one selector and one resistor (1S1R) memory device exhibits a low operation voltage, good ON/OFF ratio of 105, uniform current distribution, excellent flexibility, and stable I-V curve at 85 °C. The good selection and memory properties of the flexible 1S1R memory device are highly promising for high-density and low-power flexible electronic applications.

原文English
頁(從 - 到)518-524
頁數7
期刊IEEE Journal of the Electron Devices Society
6
DOIs
出版狀態Published - 2018 2月 5

All Science Journal Classification (ASJC) codes

  • 生物技術
  • 電子、光磁材料
  • 電氣與電子工程

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