The authors report the fabrication and characterization of a resistive random access memory (RRAM) with a Ti/TaO2/Pt structure at room temperature. According to the X-ray photoelectron spectroscopy (XPS) analysis of the deposited TaOx film and the data fitting of the XPS spectrum data, the deposited TaOx film was then confirmed to be in the TaO2 phase. The fabricated device was shown to exhibit bipolar resistance switching behavior over one hundred DC switching cycles and showed stable retention characteristics for over 104 s under a 100 mV stress. It was also found that the electrical conduction mechanism in set process was firstly dominated by ohmic conduction and then transformed to the space-charge-limited process in the high resistance state. Finally, the conduction mechanism turned to ohmic conduction again in low resistance state.
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