Bipolar resistive switching characteristics of TaO2 RRAM

Wei Kang Hsieh, Shoou Jinn Chang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication and characterization of a resistive random access memory (RRAM) with a Ti/TaO2/Pt structure at room temperature. According to the X-ray photoelectron spectroscopy (XPS) analysis of the deposited TaOx film and the data fitting of the XPS spectrum data, the deposited TaOx film was then confirmed to be in the TaO2 phase. The fabricated device was shown to exhibit bipolar resistance switching behavior over one hundred DC switching cycles and showed stable retention characteristics for over 104 s under a 100 mV stress. It was also found that the electrical conduction mechanism in set process was firstly dominated by ohmic conduction and then transformed to the space-charge-limited process in the high resistance state. Finally, the conduction mechanism turned to ohmic conduction again in low resistance state.

原文English
頁(從 - 到)1108-1111
頁數4
期刊Science of Advanced Materials
8
發行號5
DOIs
出版狀態Published - 2016 一月 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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