Bistable diodes grown by silicon molecular beam epitaxy

Xuegen Zhu, Xinyu Zheng, Mike Pak, Martin O. Tanner, Kang L. Wang

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.

原文English
頁(從 - 到)201-205
頁數5
期刊Thin Solid Films
321
發行號1-2
DOIs
出版狀態Published - 1998 5月 26

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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