Si devices with two double δ-doped (one p-δ and one n-δ) junctions were grown by silicon molecular beam epitaxy (MBE). A new I-V testability phenomenon was observed in those devices. We used a 'band switching' mechanism to explain the bistability. Devices with different doping and spacer widths were grown to test the proposed mechanism. Finally, a detailed temperature dependence measurement of the I-V characteristics was shown to confirm our proposed mechanism.
All Science Journal Classification (ASJC) codes