Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications

Yi Sheng Lai, Chia Hsun Tu, Dim Lee Kwong, J. S. Chen

研究成果: Article同行評審

191 引文 斯高帕斯(Scopus)

摘要

Poly(N-vinylcarbazole) (PVK) has been fabricated by spin-coating to show the bistable resistance switching characteristics. Various resistance states can be made by controlling the on-state current through the PVK films. The resistance of the on-state PVK films also affects the turn-off current, which needs to erase the on state. The filament theory is used to elucidate the observed phenomenon. We demonstrate that the PVK films exhibit good retention and stable "read-write-read-erase" cyclic switching characteristics. The PVK films also show a good switching behavior with on-off ratio of 104, which will be a potential material for nonvolatile memory application.

原文English
文章編號122101
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號12
DOIs
出版狀態Published - 2005 9月 19

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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