Poly(N-vinylcarbazole) (PVK) has been fabricated by spin-coating to show the bistable resistance switching characteristics. Various resistance states can be made by controlling the on-state current through the PVK films. The resistance of the on-state PVK films also affects the turn-off current, which needs to erase the on state. The filament theory is used to elucidate the observed phenomenon. We demonstrate that the PVK films exhibit good retention and stable "read-write-read-erase" cyclic switching characteristics. The PVK films also show a good switching behavior with on-off ratio of 104, which will be a potential material for nonvolatile memory application.
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