Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM

Jheng Yi Chen, Ming Yu Chang, Shi Hao Chen, Jia Wei Lee, Meng-Hsueh Chiang

研究成果: Conference contribution

摘要

This work proposes a body-biasing technique to optimize Vmin of the 6T-SRAM based on 5nm-node multi-Vt FD-SOI devices. Accounting for the process variation, the operating voltage, Vmin, is estimated at 6-sigma yield. By properly selecting the back bias, the lowest Vmin is achieved for each of the three operation modes: high-performance, standard and low-voltage modes. In high-performance mode, the optimized Vmin is reduced to 0.491 V at back bias of 0.2 V. The proposed technique offers a design flexibility for optimizing the SRAM performance and yield by adjusting the back bias without complicated process technology requirements.

原文English
主出版物標題2018 19th International Symposium on Quality Electronic Design, ISQED 2018
發行者IEEE Computer Society
頁面151-155
頁數5
ISBN(電子)9781538612149
DOIs
出版狀態Published - 2018 五月 9
事件19th International Symposium on Quality Electronic Design, ISQED 2018 - Santa Clara, United States
持續時間: 2018 三月 132018 三月 14

出版系列

名字Proceedings - International Symposium on Quality Electronic Design, ISQED
2018-March
ISSN(列印)1948-3287
ISSN(電子)1948-3295

Other

Other19th International Symposium on Quality Electronic Design, ISQED 2018
國家United States
城市Santa Clara
期間18-03-1318-03-14

指紋

Static random access storage
Electric potential

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

引用此文

Chen, J. Y., Chang, M. Y., Chen, S. H., Lee, J. W., & Chiang, M-H. (2018). Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM. 於 2018 19th International Symposium on Quality Electronic Design, ISQED 2018 (頁 151-155). (Proceedings - International Symposium on Quality Electronic Design, ISQED; 卷 2018-March). IEEE Computer Society. https://doi.org/10.1109/ISQED.2018.8357280
Chen, Jheng Yi ; Chang, Ming Yu ; Chen, Shi Hao ; Lee, Jia Wei ; Chiang, Meng-Hsueh. / Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM. 2018 19th International Symposium on Quality Electronic Design, ISQED 2018. IEEE Computer Society, 2018. 頁 151-155 (Proceedings - International Symposium on Quality Electronic Design, ISQED).
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abstract = "This work proposes a body-biasing technique to optimize Vmin of the 6T-SRAM based on 5nm-node multi-Vt FD-SOI devices. Accounting for the process variation, the operating voltage, Vmin, is estimated at 6-sigma yield. By properly selecting the back bias, the lowest Vmin is achieved for each of the three operation modes: high-performance, standard and low-voltage modes. In high-performance mode, the optimized Vmin is reduced to 0.491 V at back bias of 0.2 V. The proposed technique offers a design flexibility for optimizing the SRAM performance and yield by adjusting the back bias without complicated process technology requirements.",
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Chen, JY, Chang, MY, Chen, SH, Lee, JW & Chiang, M-H 2018, Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM. 於 2018 19th International Symposium on Quality Electronic Design, ISQED 2018. Proceedings - International Symposium on Quality Electronic Design, ISQED, 卷 2018-March, IEEE Computer Society, 頁 151-155, 19th International Symposium on Quality Electronic Design, ISQED 2018, Santa Clara, United States, 18-03-13. https://doi.org/10.1109/ISQED.2018.8357280

Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM. / Chen, Jheng Yi; Chang, Ming Yu; Chen, Shi Hao; Lee, Jia Wei; Chiang, Meng-Hsueh.

2018 19th International Symposium on Quality Electronic Design, ISQED 2018. IEEE Computer Society, 2018. p. 151-155 (Proceedings - International Symposium on Quality Electronic Design, ISQED; 卷 2018-March).

研究成果: Conference contribution

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Chen JY, Chang MY, Chen SH, Lee JW, Chiang M-H. Body-biasing assisted vmin optimization for 5nm-node multi-Vt FD-SOI 6T-SRAM. 於 2018 19th International Symposium on Quality Electronic Design, ISQED 2018. IEEE Computer Society. 2018. p. 151-155. (Proceedings - International Symposium on Quality Electronic Design, ISQED). https://doi.org/10.1109/ISQED.2018.8357280