Bond-breaking induced lifshitz transition in robust dirac semimetal VAI3

Yiyuan Liu, Yu Fei Liu, Xin Gui, Cheng Xiang, Hui Bin Zhou, Chuang Han Hsu, Hsin Lin, Tay Rong Chang, Weiwei Xie, Shuang Jia

研究成果: Article同行評審

摘要

Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper, we report that the type-II Dirac semimetal VAl3 hosts exceptional, robust topological electrons which can tolerate extreme change of chemical composition. The Dirac electrons remain intact, even after a substantial part of V atoms have been replaced in the V1-xTixAl3solid solutions. This Dirac semimetal state ends at x = 0:35, where a Lifshitz transition to p-type trivial metal occurs. The V-Al bond is completely broken in this transition as long as the bonding orbitals are fully depopulated by the holes donated from Ti substitution. In other words, the Dirac electrons in VAl3are protected by the V-Al bond, whose molecular orbital is their bonding gravity center. Our understanding on the interrelations among electron count, chemical bond, and electronic properties in topological semimetals suggests a rational approach to search robust, chemical-bond-protected topological materials.

原文English
頁(從 - 到)15517-15523
頁數7
期刊Proceedings of the National Academy of Sciences of the United States of America
117
發行號27
DOIs
出版狀態Published - 2020 七月 7

All Science Journal Classification (ASJC) codes

  • General

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