Bond structure in porous SiOCH low-k film fabricated by ultraviolet irradiation

Chun Hsien Huang, Hui Ling Huang, Chen I. Hung, Na Fu Wang, Yeong-Her Wang, Mau-phon Houng

研究成果: Article

16 引文 斯高帕斯(Scopus)

摘要

Using an advanced ultraviolet irradiation (UV curing) process, a high performance porous low-kfilm of k = 2.57, whose Young's modulus is larger than 8 GPa, now is developed to improve the mechanical properties of a film by the reconstruction of Si-Onetwork structure from cage-like Si-Obonds, suboxide structures and Si-CH3 bonds. It was found that the UV curing process can efficiently strengthen the mechanical properties of porous low-k film, and reduce its dielectric constant value by removing hydrocarbon bonds to form porosities. As a result, the key features of this optimal SiOCH material, high elastic modulus and a low dielectric constant, provide promising properties for future integrated schemes.

原文English
頁(從 - 到)1532-1535
頁數4
期刊Japanese Journal of Applied Physics
47
發行號3 PART 1
DOIs
出版狀態Published - 2008 三月 14

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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