Boron oxide interaction with silicon in silicon molecular beam epitaxy

E. De Frésart, S. S. Rhee, K. L. Wang

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

B2O3 decomposition by reaction with Si has been studied in situ by Auger electron spectroscopy in a Si molecular beam epitaxy environment as a function of the silicon flux (0<JSi<14.5 Å/min) and the growth temperature (25°C<Ts<800°C) . Quantitative analysis of Auger signals indicates that oxygen is associated with both SiO2 and B2O3. Below a critical substrate temperature (Ts<500°C), no reaction occurs between B2O3 and Si. When the substrate temperature is higher than 500°C, the atomic fraction of Si and B increases while that for SiO 2 and B2O3 decreases. The chemical reaction which causes the signal changes is thermally activated, as shown by the dependence of the oxygen on boron concentration ratio, I[O/B], which drops rapidly according to an Arrhenius relation with an activation energy E a=4.5±1.0 eV. From the experimental results, we propose a model which involves B2O3 reduction by Si to form the (Si-B) and SiO2 phases. SiO2 is then decomposed by Si bombardment on the surface to produce SiO which subsequently desorbs.

原文English
頁(從 - 到)847-849
頁數3
期刊Applied Physics Letters
49
發行號14
DOIs
出版狀態Published - 1986

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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