Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus; Chien Chia Chen; Ming Jui Lee; Hsueh Hsing Liu; Jen Inn Chyi; Michael R.S. Huang; Chuan Pu Liu; Tzu Chiao Wei; Jr Hau He; Kun Yu Lai

doi:10.1002/adma.201501538

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R.S. Huang, Chuan Pu Liu, Tzu Chiao Wei, Jr Hau He, Kun Yu Lai

研究成果: Article › 同行評審

9 引文斯高帕斯（Scopus）

摘要

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

原文	English
頁（從 - 到）	4845-4850
頁數	6
期刊	Advanced Materials
卷	27
發行號	33
DOIs	https://doi.org/10.1002/adma.201501538
出版狀態	Published - 2015 9月 1

All Science Journal Classification (ASJC) codes

材料科學(全部)
材料力學
機械工業

存取文件

10.1002/adma.201501538

其它文件與鏈接

引用此

@article{896362b08aa64efeb2012e2d3ab156d9,

title = "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si",

abstract = "Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.",

author = "Hus, {Jui Wei} and Chen, {Chien Chia} and Lee, {Ming Jui} and Liu, {Hsueh Hsing} and Chyi, {Jen Inn} and Huang, {Michael R.S.} and Liu, {Chuan Pu} and Wei, {Tzu Chiao} and He, {Jr Hau} and Lai, {Kun Yu}",

year = "2015",

month = sep,

day = "1",

doi = "10.1002/adma.201501538",

language = "English",

volume = "27",

pages = "4845--4850",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "33",

}

TY - JOUR

T1 - Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

AU - Hus, Jui Wei

AU - Chen, Chien Chia

AU - Lee, Ming Jui

AU - Liu, Hsueh Hsing

AU - Chyi, Jen Inn

AU - Huang, Michael R.S.

AU - Liu, Chuan Pu

AU - Wei, Tzu Chiao

AU - He, Jr Hau

AU - Lai, Kun Yu

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

AB - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

UR - http://www.scopus.com/inward/record.url?scp=84940707308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940707308&partnerID=8YFLogxK

U2 - 10.1002/adma.201501538

DO - 10.1002/adma.201501538

M3 - Article

C2 - 26178685

AN - SCOPUS:84940707308

VL - 27

SP - 4845

EP - 4850

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 33

ER -

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此