Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus; Chien Chia Chen; Ming Jui Lee; Hsueh Hsing Liu; Jen Inn Chyi; Michael R.S. Huang; Chuan Pu Liu; Tzu Chiao Wei; Jr Hau He; Kun Yu Lai

doi:10.1002/adma.201501538

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus, Chien Chia Chen, Ming Jui Lee, Hsueh Hsing Liu, Jen Inn Chyi, Michael R.S. Huang, Chuan Pu Liu, Tzu Chiao Wei, Jr Hau He, Kun Yu Lai

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

原文	English
頁（從 - 到）	4845-4850
頁數	6
期刊	Advanced Materials
卷	27
發行號	33
DOIs	https://doi.org/10.1002/adma.201501538
出版狀態	Published - 2015 九月 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201501538

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引用此

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AU - Liu, Hsueh Hsing

AU - Chyi, Jen Inn

AU - Huang, Michael R.S.

AU - Liu, Chuan Pu

AU - Wei, Tzu Chiao

AU - He, Jr Hau

AU - Lai, Kun Yu

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