摘要
Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.
原文 | English |
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頁(從 - 到) | 4845-4850 |
頁數 | 6 |
期刊 | Advanced Materials |
卷 | 27 |
發行號 | 33 |
DOIs | |
出版狀態 | Published - 2015 九月 1 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering