Bound-to-bound intersubband transitions in a δ-doped p-type Si/SixGe1-x/Si quantum well

S. K. Chun, D. S. Pan, K. L. Wang

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

The absorption spectrum in p-type Si/Si0.6Ge0.4/Si structure with a δ-doped quantum well grown on Si(001) substrate is calculated using a multiband model. We have generalized the previous treatment of the depolarization effect in n-type Si to include subband multiplicity, nonparabolicity, and valence band anisotropy. An implicit formula for the effective plasma frequency was used to conveniently include these effects in the calculation. We found that it is necessary to treat the depolarization effect in the complicated couplings among valence bands in order to explain the observed spectrum.

原文English
頁(從 - 到)1119-1121
頁數3
期刊Applied Physics Letters
62
發行號10
DOIs
出版狀態Published - 1993

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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