Breakdown voltage walkout resulting from hot-carrier-induced interface states in n-type LDMOS transistors

J. F. Chen, Y. S. Feng

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The mechanism of hot-carrier-induced drain breakdown voltage walkout in an n-type lateral diffused MOS transistor is investigated. On the basis of the data of charge pumping measurement, hotcarrier-induced interface states created at the accumulation region is proposed to be responsible for the breakdown walkout. Further technology computer-aided-design simulations also support the before-mentioned mechanism.

原文English
頁(從 - 到)1488-1490
頁數3
期刊Electronics Letters
52
發行號17
DOIs
出版狀態Published - 2016 八月 18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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