Broadband triple-layer SiOx/SiOxNy/ SiNx antireflective coatings in textured crystalline silicon solar cells

Ting Wei Kuo, Na Fu Wang, Yu Zen Tsai, Pin Kun Hung, Mau-phon Houng

研究成果: Article

12 引文 (Scopus)

摘要

The purpose of this study is to reduce textured crystalline silicon (TCS) substrate surface-reflectivity over a wide spectral range (300-1100 nm), to improve the step coverage of the textured structure, and to shift the minimal value of reflection from the unabsorbed region to the absorbed region. The TCS solar-cell interface between air and silicon was added to a SiO x/SiOxNy/SiNx triple-layer anti-reflective coatings (TLARCs) structure using the plasma-enhanced chemical vapor deposition (PECVD) growth method. This paper presents theoretical and practical discussions, as well as the experimental results of fabricating the films and devices. The average reflection of the SiOx/SiO xNy/SiNx TLARs reduced to 2.01% (300-1100 nm). The minimal value of reflection was shifted from 1370 nm (unabsorbed region) to 968 nm (absorbed region). The SEM images show effective step coverage. In comparison to the untreated TCS solar cells, applying the experimental SiO x/SiOxNy/SiNx TLARCs to conventional TCS solar cells improved the short-circuit current density (Jsc) by 7.78%, and solar-cell efficiency by 10.95%. This study demonstrates that the SiOx/SiOxNy/SiNx TLARCs structure provides antireflective properties over a broad range of visible and near-infrared light wavelengths. An effective step coverage and minimal value of reflection from unabsorbed region shift to the absorbed region is demonstrated.

原文English
頁(從 - 到)211-218
頁數8
期刊Materials Science in Semiconductor Processing
25
DOIs
出版狀態Published - 2014 一月 1

指紋

Silicon solar cells
Reflective coatings
solar cells
Crystalline materials
broadband
coatings
Coatings
Silicon
shift
silicon
short circuit currents
Plasma enhanced chemical vapor deposition
Short circuit currents
vapor deposition
current density
Solar cells
reflectance
Current density
scanning electron microscopy
air

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

引用此文

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title = "Broadband triple-layer SiOx/SiOxNy/ SiNx antireflective coatings in textured crystalline silicon solar cells",
abstract = "The purpose of this study is to reduce textured crystalline silicon (TCS) substrate surface-reflectivity over a wide spectral range (300-1100 nm), to improve the step coverage of the textured structure, and to shift the minimal value of reflection from the unabsorbed region to the absorbed region. The TCS solar-cell interface between air and silicon was added to a SiO x/SiOxNy/SiNx triple-layer anti-reflective coatings (TLARCs) structure using the plasma-enhanced chemical vapor deposition (PECVD) growth method. This paper presents theoretical and practical discussions, as well as the experimental results of fabricating the films and devices. The average reflection of the SiOx/SiO xNy/SiNx TLARs reduced to 2.01{\%} (300-1100 nm). The minimal value of reflection was shifted from 1370 nm (unabsorbed region) to 968 nm (absorbed region). The SEM images show effective step coverage. In comparison to the untreated TCS solar cells, applying the experimental SiO x/SiOxNy/SiNx TLARCs to conventional TCS solar cells improved the short-circuit current density (Jsc) by 7.78{\%}, and solar-cell efficiency by 10.95{\%}. This study demonstrates that the SiOx/SiOxNy/SiNx TLARCs structure provides antireflective properties over a broad range of visible and near-infrared light wavelengths. An effective step coverage and minimal value of reflection from unabsorbed region shift to the absorbed region is demonstrated.",
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Broadband triple-layer SiOx/SiOxNy/ SiNx antireflective coatings in textured crystalline silicon solar cells. / Kuo, Ting Wei; Wang, Na Fu; Tsai, Yu Zen; Hung, Pin Kun; Houng, Mau-phon.

於: Materials Science in Semiconductor Processing, 卷 25, 01.01.2014, p. 211-218.

研究成果: Article

TY - JOUR

T1 - Broadband triple-layer SiOx/SiOxNy/ SiNx antireflective coatings in textured crystalline silicon solar cells

AU - Kuo, Ting Wei

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Hung, Pin Kun

AU - Houng, Mau-phon

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The purpose of this study is to reduce textured crystalline silicon (TCS) substrate surface-reflectivity over a wide spectral range (300-1100 nm), to improve the step coverage of the textured structure, and to shift the minimal value of reflection from the unabsorbed region to the absorbed region. The TCS solar-cell interface between air and silicon was added to a SiO x/SiOxNy/SiNx triple-layer anti-reflective coatings (TLARCs) structure using the plasma-enhanced chemical vapor deposition (PECVD) growth method. This paper presents theoretical and practical discussions, as well as the experimental results of fabricating the films and devices. The average reflection of the SiOx/SiO xNy/SiNx TLARs reduced to 2.01% (300-1100 nm). The minimal value of reflection was shifted from 1370 nm (unabsorbed region) to 968 nm (absorbed region). The SEM images show effective step coverage. In comparison to the untreated TCS solar cells, applying the experimental SiO x/SiOxNy/SiNx TLARCs to conventional TCS solar cells improved the short-circuit current density (Jsc) by 7.78%, and solar-cell efficiency by 10.95%. This study demonstrates that the SiOx/SiOxNy/SiNx TLARCs structure provides antireflective properties over a broad range of visible and near-infrared light wavelengths. An effective step coverage and minimal value of reflection from unabsorbed region shift to the absorbed region is demonstrated.

AB - The purpose of this study is to reduce textured crystalline silicon (TCS) substrate surface-reflectivity over a wide spectral range (300-1100 nm), to improve the step coverage of the textured structure, and to shift the minimal value of reflection from the unabsorbed region to the absorbed region. The TCS solar-cell interface between air and silicon was added to a SiO x/SiOxNy/SiNx triple-layer anti-reflective coatings (TLARCs) structure using the plasma-enhanced chemical vapor deposition (PECVD) growth method. This paper presents theoretical and practical discussions, as well as the experimental results of fabricating the films and devices. The average reflection of the SiOx/SiO xNy/SiNx TLARs reduced to 2.01% (300-1100 nm). The minimal value of reflection was shifted from 1370 nm (unabsorbed region) to 968 nm (absorbed region). The SEM images show effective step coverage. In comparison to the untreated TCS solar cells, applying the experimental SiO x/SiOxNy/SiNx TLARCs to conventional TCS solar cells improved the short-circuit current density (Jsc) by 7.78%, and solar-cell efficiency by 10.95%. This study demonstrates that the SiOx/SiOxNy/SiNx TLARCs structure provides antireflective properties over a broad range of visible and near-infrared light wavelengths. An effective step coverage and minimal value of reflection from unabsorbed region shift to the absorbed region is demonstrated.

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