BSIM-CG: A compact model of cylindrical gate/nanowire MOSFETs for circuit simulations

V. Sriramkumar, Darsen D. Lu, Tanvir H. Morshed, Yukiya Kawakami, Peter M. Lee, Ali M. Niknejad, Chenming Hu

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

A full-fledged surface potential based compact model for cylindrical gate transistors replete with physical effects such as polysilicon gate depletion, mobility degradation, quantum mechanical effects, short channel effects, leakage currents, and parasitic resistances and capacitances etc. is presented. For the first time we present calibration results of such a model to a cylindrical gate technology that exhibits asymmetric i-v characteristics.

原文English
主出版物標題Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
頁面124-125
頁數2
DOIs
出版狀態Published - 2011
事件2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan
持續時間: 2011 四月 252011 四月 27

出版系列

名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
國家Taiwan
城市Hsinchu
期間11-04-2511-04-27

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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