BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

S. Venugopalan; Darsen D. Lu; Yukiya Kawakami; Peter M. Lee; Ali M. Niknejad; Chenming Hu

doi:10.1016/j.sse.2011.09.001

BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

S. Venugopalan, Darsen D. Lu, Yukiya Kawakami, Peter M. Lee, Ali M. Niknejad, Chenming Hu

微電子工程研究所

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

A turnkey, production circuit simulation ready compact model for cylindrical/surround gate transistors has been developed. The core of the model contains an enhanced surface potential based description of the charge in the channel. Analytical expressions for channel current and terminal charges have been derived. A method to account for quantum confinement in the cylindrical structure in a compact model framework is described. For the first time we present calibration results of such a model to a cylindrical gate technology that also exhibits asymmetric I-V characteristics.

原文	English
頁（從 - 到）	79-89
頁數	11
期刊	Solid-State Electronics
卷	67
發行號	1
DOIs	https://doi.org/10.1016/j.sse.2011.09.001
出版狀態	Published - 2012 1月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
材料化學
電氣與電子工程

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10.1016/j.sse.2011.09.001

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AU - Hu, Chenming

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BSIM-CG: A compact model of cylindrical/surround gate MOSFET for circuit simulations

摘要

All Science Journal Classification (ASJC) codes

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