Buffer-facilitated epitaxial growth of ZnO nanowire

Yan Ru Lin, Yung Kuan Tseng, Shang Shian Yang, Shinn Tyan Wu, Cheng Liang Hsu, Shoou Jinn Chang

研究成果: Article同行評審

55 引文 斯高帕斯(Scopus)

摘要

This study introduces a new train of thought regarding the growth of well-arrayed nanowires. To reduce how defects such as grain boundary affect subsequent growth of the nanowires, the epitaxial buffer layer should be carefully chosen. The titanium nitride (TiN) buffer layer facilitates the growth not only of the arrays but also the epitaxy of zinc oxide (ZnO) nanowires, even given a lattice mismatch of up to 8.35% and the entirely different crystal structures between them.

原文English
頁(從 - 到)579-583
頁數5
期刊Crystal Growth and Design
5
發行號2
DOIs
出版狀態Published - 2005 三月

All Science Journal Classification (ASJC) codes

  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學

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