c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

Yi Hao Chen, Shoou Jinn Chang, Cheng Liang Hsu, Yao Kun Wu, Ting Jen Hsueh

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 1020 cm-3. The efficiency of the fabricated SiNx/textured c-Si photovoltaic device was 16.08%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade-1 and over 104, respectively.

原文English
頁(從 - 到)96547-96550
頁數4
期刊RSC Advances
5
發行號117
DOIs
出版狀態Published - 2015 11月 6

All Science Journal Classification (ASJC) codes

  • 一般化學
  • 一般化學工程

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