c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

Yi Hao Chen; Shoou Jinn Chang; Cheng Liang Hsu; Yao Kun Wu; Ting Jen Hsueh

doi:10.1039/c5ra17403a

c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

Yi Hao Chen
, Shoou Jinn Chang
, Cheng Liang Hsu
, Yao Kun Wu
, Ting Jen Hsueh

微電子工程研究所

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 10²⁰ cm^-3. The efficiency of the fabricated SiN_x/textured c-Si photovoltaic device was 16.08%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade^-1 and over 10⁴, respectively.

原文	English
頁（從 - 到）	96547-96550
頁數	4
期刊	RSC Advances
卷	5
發行號	117
DOIs	https://doi.org/10.1039/c5ra17403a
出版狀態	Published - 2015 11月 6

UN SDG

此研究成果有助於以下永續發展目標

SDG 7 經濟實惠的清潔能源

All Science Journal Classification (ASJC) codes

一般化學
一般化學工程

存取文件

10.1039/c5ra17403a

其它文件與鏈接

引用此

@article{bceb530eb9d244029c1b674ad5aa0ba5,

title = "c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping",

abstract = "In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 1020 cm-3. The efficiency of the fabricated SiNx/textured c-Si photovoltaic device was 16.08\%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade-1 and over 104, respectively.",

author = "Chen, \{Yi Hao\} and Chang, \{Shoou Jinn\} and Hsu, \{Cheng Liang\} and Wu, \{Yao Kun\} and Hsueh, \{Ting Jen\}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2015",

month = nov,

day = "6",

doi = "10.1039/c5ra17403a",

language = "English",

volume = "5",

pages = "96547--96550",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "117",

}

TY - JOUR

T1 - c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

AU - Chen, Yi Hao

AU - Chang, Shoou Jinn

AU - Hsu, Cheng Liang

AU - Wu, Yao Kun

AU - Hsueh, Ting Jen

PY - 2015/11/6

Y1 - 2015/11/6

N2 - In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 1020 cm-3. The efficiency of the fabricated SiNx/textured c-Si photovoltaic device was 16.08%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade-1 and over 104, respectively.

AB - In this work, ICP-assisted hot wire implantation doping was carried out to fabricate c-Si solar cells. The obtained junction depth obtained was around 70 nm and the carrier concentration of the phosphorus was approximately 9.34 × 1020 cm-3. The efficiency of the fabricated SiNx/textured c-Si photovoltaic device was 16.08%. ICP-assisted hot wire implantation doping was also utilized to prepare Si n-MOSFETs. Experimental results indicate that the sub-threshold slope and on-off current ratio of the Si n-MOSFETs were about 0.39 V decade-1 and over 104, respectively.

UR - https://www.scopus.com/pages/publications/84946944040

UR - https://www.scopus.com/pages/publications/84946944040#tab=citedBy

U2 - 10.1039/c5ra17403a

DO - 10.1039/c5ra17403a

M3 - Article

AN - SCOPUS:84946944040

SN - 2046-2069

VL - 5

SP - 96547

EP - 96550

JO - RSC Advances

JF - RSC Advances

IS - 117

ER -

c-Si solar cells and Si n-MOSFETs prepared by ICP assisted hot wire implantation doping

摘要

UN SDG

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此