Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells

Jian V. Li, Richard S. Crandall, David L. Young, Matthew R. Page, Eugene Iwaniczko, Qi Wang

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

We use capacitance techniques to directly measure the Fermi level at the crystalline/amorphous interface in n-type silicon heterojunction solar cells. The hole density calculated from the Fermi level position and the inferred band-bending picture show strong inversion of (n)crystalline silicon at the interface at equilibrium. Bias dependent experiments show that the Fermi level is not pinned at the interface. Instead, it moves farther from and closer to the crystalline silicon valence band under a reverse and forward bias, respectively. Under a forward bias or illumination, the Fermi level at the interface moves closer to the crystalline silicon valence band thus increases the excess hole density and band bending at the interface. This band bending further removes majority electrons away from the interface leading to lower interface recombination and higher open-circuit voltage.

原文English
文章編號114502
期刊Journal of Applied Physics
110
發行號11
DOIs
出版狀態Published - 2011 十二月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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