Capacitor-less low-dropout regulator with slew-rate-enhanced circuit

Chien-Hung Tsai, J. H. Wang

研究成果: Article

4 引文 (Scopus)

摘要

A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 μA at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.

原文English
頁(從 - 到)384-391
頁數8
期刊IET Circuits, Devices and Systems
5
發行號5
DOIs
出版狀態Published - 2011 九月 1

指紋

Transistors
Capacitors
Networks (circuits)
Electric power utilization
Electric potential
Power transistors

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

引用此文

@article{8f44207532084cf1ac6581d6f0dffc02,
title = "Capacitor-less low-dropout regulator with slew-rate-enhanced circuit",
abstract = "A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 μA at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.",
author = "Chien-Hung Tsai and Wang, {J. H.}",
year = "2011",
month = "9",
day = "1",
doi = "10.1049/iet-cds.2010.0309",
language = "English",
volume = "5",
pages = "384--391",
journal = "IET Circuits, Devices and Systems",
issn = "1751-858X",
publisher = "Institution of Engineering and Technology",
number = "5",

}

Capacitor-less low-dropout regulator with slew-rate-enhanced circuit. / Tsai, Chien-Hung; Wang, J. H.

於: IET Circuits, Devices and Systems, 卷 5, 編號 5, 01.09.2011, p. 384-391.

研究成果: Article

TY - JOUR

T1 - Capacitor-less low-dropout regulator with slew-rate-enhanced circuit

AU - Tsai, Chien-Hung

AU - Wang, J. H.

PY - 2011/9/1

Y1 - 2011/9/1

N2 - A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 μA at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.

AB - A capacitor-less low-power low-dropout regulator (LDR) with a slew-rate-enhanced circuit (SRE) was proposed. The SRE uses six transistors to constitute two comparators and two auxiliary transistors. The comparators sense the variation of load current to control one of the auxiliary transistors that generate a large current to charge or discharge the gate capacitor of the power transistor; thus SRE increases the slew-rate at the gate of the power transistor. The quiescent current of the LDR remains 18 μA at the steady state because the auxiliary transistors work at the cut-off region to reduce power consumption. When load current changes between 0.1 and 100 mA, the variation of the output voltage of the LDR is improved from 675 to 300 mV.

UR - http://www.scopus.com/inward/record.url?scp=82355190289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82355190289&partnerID=8YFLogxK

U2 - 10.1049/iet-cds.2010.0309

DO - 10.1049/iet-cds.2010.0309

M3 - Article

AN - SCOPUS:82355190289

VL - 5

SP - 384

EP - 391

JO - IET Circuits, Devices and Systems

JF - IET Circuits, Devices and Systems

SN - 1751-858X

IS - 5

ER -