A simplified automatic vapor capless annealing technique for ion implanted GaAs wafers is demonstrated. The basic method is to put an implanted GaAs wafer in a partially sealed quartz crucible which is filled with GaAs powder. The measured Hall mobility of the implanted sample annealed by this method is almost the same as those obtained by the other usual annealing methods, but the transition region can be reduced significantly. Furthermore, the surface morphology is better than that obtained by dielectric encapsulant annealing methods.
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