Capless annealing of ion implanted GaAs in automatically evaporated vapor

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A simplified automatic vapor capless annealing technique for ion implanted GaAs wafers is demonstrated. The basic method is to put an implanted GaAs wafer in a partially sealed quartz crucible which is filled with GaAs powder. The measured Hall mobility of the implanted sample annealed by this method is almost the same as those obtained by the other usual annealing methods, but the transition region can be reduced significantly. Furthermore, the surface morphology is better than that obtained by dielectric encapsulant annealing methods.

原文English
頁(從 - 到)554-556
頁數3
期刊Applied Physics Letters
46
發行號6
DOIs
出版狀態Published - 1985

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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