Capture-emission process in double Poole-Frenkel well traps: Theory and experiments

C. Y. Chang, W. C. Hsu, S. J. Wang, S. S. Hau

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)


The field-dependent capture-emission process has been studied for double Poole-Frenkel well traps compared with that of single Poole-Frenkel well trap. The emission rate increases with increasing field strength for a single trap. However, for a double trap, it increases to a maximum then decreases with further increasing field due to the barrier lowering and interstate interactions between these two wells. Experimental capacitance deep-level transient spectroscopic data of GaAs samples grown by molecular-beam epitaxy show that when there is a delay in the capacitance transient then there always appear two levels, namely, 0.4 and 0.5 eV. In addition, for both levels, the emission rate increases first to a maximum and then decreases with increasing electric field.

頁(從 - 到)1042-1045
期刊Journal of Applied Physics
出版狀態Published - 1986

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)


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