Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry

H. Ahn, C. H. Shen, C. L. Wu, S. Gwo

研究成果: Article

7 引文 斯高帕斯(Scopus)

摘要

The refractive index and optical absorption of wurzite InN epilayers grown on Si(111) substrates with a β-Si3N4/AlN(0001) double-buffer by nitrogen-plasma-assisted molecular-beam epitaxy were studied by employing spectroscopic ellipsometry (SE). The crystalline quality of the InN epilayers were investigated by cross-sectional transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. SE results analyzed by the Adachi's model for the dielectric function show that the optical absorption edge of InN varies in the range of 0.76-0.83 eV depending on the carrier concentration, which in turn can be adjusted by the thickness of the AlN buffer layer.

原文English
頁(從 - 到)69-73
頁數5
期刊Thin Solid Films
494
發行號1-2
DOIs
出版狀態Published - 2006 一月 3

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

指紋 深入研究「Carrier concentration dependent optical properties of wurzite InN epitaxial films on Si(111) studied by spectroscopic ellipsometry」主題。共同形成了獨特的指紋。

引用此