Carrier doping into boron nanobelts by neutron transmutation

Kazuhiro Kirihara, Yoshiki Shimizu, Yoichi Yamada, Fumitaka Esaka, Takeshi Sasaki, Naoto Koshizaki, Hiroyuki Yamamoto, Shin Ichi Shamoto, Kaoru Kimura

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

We report the effects of a neutron-capture reaction of isotope B 10 on the structure and electrical transport of B 10 -enriched single-crystalline boron nanobelts. Partial amorphization, particularly at the surface of the nanobelt, was observed after thermal neutron irradiation with a dose of 2× 10 19 cm-2. Carrier doping into the nanobelts by neutron transmutation is expected after postannealing. The change in conductance is discussed based on the distribution of localized states in the band gap of α -tetragonal boron.

原文English
文章編號212105
期刊Applied Physics Letters
97
發行號21
DOIs
出版狀態Published - 2010 十一月 22

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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