Carrier drift velocity balance mechanism in Si-based thin film solar cells using graded microcrystalline SiGe absorption layer

Ching Ting Lee, Kuan Fu Lu, Chun Yen Tseng

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The basic idea of balancing the carrier drift velocity in the absorption layer was proposed to improve the conversion efficiency of Si-based thin film solar cells. Using the graded microcrystalline i-SiGe absorption layer to modulate the energy band, the driven electric field of holes was increased from 5.92kV/cm to 7.26kV/cm, while the driven electric field of electrons was kept at 5.92kV/cm. Compared with the step i-SiGe absorption layer, the drift velocity ratio of electrons and holes was more balanced. The improvement mechanism of the p-Si/graded-i-SiGe/n-Si solar cells was further analyzed using the measurement of the biased quantum efficiency. Consequently, the short-circuit current density and the associated conversion efficiency of the p-Si/graded-i-SiGe/n-Si solar cells were improved from 21.40 ± 0.47mA/cm2 to 26.36 ± 0.56 mA/cm2 and from 7.43 ± 0.23% to 9.15 ± 0.25%, respectively compared with the p-Si/step-i-SiGe/n-Si solar cells.

原文English
頁(從 - 到)1-7
頁數7
期刊Solar Energy
114
DOIs
出版狀態Published - 2015 四月 1

All Science Journal Classification (ASJC) codes

  • 可再生能源、永續發展與環境
  • 材料科學(全部)

指紋

深入研究「Carrier drift velocity balance mechanism in Si-based thin film solar cells using graded microcrystalline SiGe absorption layer」主題。共同形成了獨特的指紋。

引用此