Carrier dynamics of Mn-induced states in GaN thin films

Yu Ting Chen, Chi Yuan Yang, Po Cheng Chen, Jinn Kong Sheu, Kung Hsuan Lin

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

GaN-based materials are widely used for light emission devices, but the intrinsic property of wide bandgap makes it improper for photovoltaic applications. Recently, manganese was doped into GaN for absorption of visible light, and the conversion efficiency of GaN-based solar cells has been greatly improved. We conducted transient optical measurements to study the carrier dynamics of Mn-doped GaN. The lifetime of carriers in the Mn-related intermediate bands (at 1.5 eV above the valence band edge) is around 1.7 ns. The carrier relaxation within the Mn-induced bandtail states was on the order of a few hundred picoseconds. The relaxation times of different states are important parameters for optimization of conversion efficiency for intermediate-band solar cells.

原文English
文章編號5788
期刊Scientific reports
7
發行號1
DOIs
出版狀態Published - 2017 十二月 1

All Science Journal Classification (ASJC) codes

  • 多學科

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