Carrier transport in GaAs/AlGaAs heterostructures by microwave time-of-flight technique

S. Khorram, K. L. Wang, T. Block, D. Streit

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

An improved experimental method has been developed to study perpendicular carrier transport in heterostructures by a microwave time-of-flight technique. Transport properties of three samples, one with bulk GaAs, one with a AlGaAs barrier, and one with a AlGaAs/GaAs superlattice have been measured and analyzed in a comparative manner. A direct measurement of miniband conduction in superlattices is presented. The carrier velocity-field characteristic of GaAs/AlGaAs superlattice is measured in the field range of 10-40 kV/cm at 77 K.

原文English
頁(從 - 到)3491-3493
頁數3
期刊Applied Physics Letters
63
發行號25
DOIs
出版狀態Published - 1993

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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