An improved experimental method has been developed to study perpendicular carrier transport in heterostructures by a microwave time-of-flight technique. Transport properties of three samples, one with bulk GaAs, one with a AlGaAs barrier, and one with a AlGaAs/GaAs superlattice have been measured and analyzed in a comparative manner. A direct measurement of miniband conduction in superlattices is presented. The carrier velocity-field characteristic of GaAs/AlGaAs superlattice is measured in the field range of 10-40 kV/cm at 77 K.
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