Carrier transport properties in a thin-film Cu 2 ZnSnSe 4 solar cell

Sanjoy Paul, Istvan Gulyas, Ingrid L. Repins, Shin Mou, Jian V. Li

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

We report the measurement of majority carrier concentration, depletion width, mobility, and resistivity in a thin-film based Cu 2 ZnSnSe 4 (CZTSe) photovoltaic device. The carrier transport properties were measured using coordinated admittance spectroscopy and capacitance-voltage technique. The bias dependence of the modified dielectric relaxation in the absorber of the CZTSe solar cell was investigated to extract the mobility and resistivity. Hall measurement was also performed at room temperature for the verification of carrier concentration, resistivity, and mobility. The temperature dependent resistivity and mobility exhibit thermally activated behaviors characterized by a thermal activation energy ≈ 60 meV. The positive temperature dependence of the mobility indicates a carrier-transport impeding effect caused by the band-edge fluctuation in poly-crystalline CZTSe, whose magnitude is measurable by the aforementioned activation energy.

原文English
頁(從 - 到)103-108
頁數6
期刊Thin Solid Films
675
DOIs
出版狀態Published - 2019 四月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 表面和介面
  • 表面、塗料和薄膜
  • 金屬和合金
  • 材料化學

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