Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)2PbBr4 Perovskite

Sheng Chan Wu, Chun Sheng Wu, Ching Hang Chien, Yu Wei Zhang, Chung Xian Yang, Cheng Liu, Ming Hsien Li, Chen Fu Lin, Yu Hao Wu, Bi Hsuan Lin, Yu Hsun Chou, Yia Chung Chang, Peter Chen, Hsu Cheng Hsu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The soft and polar nature of quasi-2D (PEA)2PbBr4 perovskite, and robust photo-generated excitons lead exciton-polaritons and exciton-polarons as the important phenomena near the band edge for application in the lighting aspect. In this work, a convenient methodology is proposed based on the polariton resonant modes in temperature-dependent (77 K to RT) spectroscopy, and investigate the effect of these quasi-particles on refractive index dispersion. The large binding energy (≈335 meV) of quasi-2D excitons is obtained by the reflectance measurements at 77 K. Stable exciton-polaritons and exciton-polarons are confirmed by energy dispersions and the observation of self-trapped exciton-polaron state, respectively. Furthermore, the large negative thermal-optic coefficient due to damping effect of exciton-phonon scattering is observed. The phenomenon is opposite to those observed in conventional semiconductors (e.g., Si, Ge, GaN, AlN, GaAs, AlAs, and ZnO etc.). The observed stable negative thermal-optic coefficients from 160 K to RT indicate that the quasi-2D perovskite can be used as a phase compensator for conventional semiconductor materials.

原文English
文章編號2213427
期刊Advanced Functional Materials
33
發行號25
DOIs
出版狀態Published - 2023 6月 19

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 一般化學
  • 一般材料科學
  • 電化學
  • 生物材料

指紋

深入研究「Carrier–Phonon Interaction Induced Large Negative Thermal-Optic Coefficient at Near Band Edge of Quasi-2D (PEA)2PbBr4 Perovskite」主題。共同形成了獨特的指紋。

引用此